050-7415 rev - 8-2002 to-220 g c e APT13GP120K 1200v a new generation of high voltage power igbts. using punch-through technology and a proprietary metal gate, this igbt has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. in many cases, the power mos 7 ? igbt provides a lower cost alternative to a power mosfet. ? low conduction loss ? 100 khz operation @ 800v, 7a ? low gate charge ? 50 khz operation @ 800v, 12a ? ultrafast tail current shutoff ? rbsoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 1200 3 4.5 6 3.6 3.9 3.1 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l APT13GP120K 1200 20 30 43 21 84 84a @ 960v 290 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt g c e
050-7415 rev - 8-2002 APT13GP120K dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 13a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 800v v ge = 15v i c = 13a r g = 5 ? t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 13a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 1093 133 35 8 65 7 32 84 8 23 35 89 340 892 332 8 23 58 157 384 1262 715 unit pf v nc a ns j ns j unit c/w gm min typ max .43 n/a 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7415 rev - 8-2002 typical performance curves t j = 25c. 250s pulse test <0.5 % duty cycle t c =125c t c =25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c t c =25c t c =125c 250s pulse test <0.5 % duty cycle v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction trmperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) APT13GP120K v ce =960v v ce =240v v ce =600v i c= 6.5a i c= 13a i c= 26a i c= 6.5a i c= 13a i c= 26a 01 2 3 4 5 6 7 8 910 01 2 3 4 5 6 7 8910 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 6 8 10 12 14 16 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.8 i c = 13a t j = 25c
050-7415 rev - 8-2002 APT13GP120K t j = 125c, v ge = 10v or 15v v ge = 15v v ge = 10v v ge =15v,t j =125c v ge =10v,t j =125c v ge =15v,t j =25c v ge =10v,t j =25c t j = 25c, v ge = 10v or 15v 70 60 50 40 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 1800 1600 1400 1200 1000 800 600 400 200 0 3000 2500 2000 1500 1000 500 0 t j = 125c, v ge = 10v or 15v e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a t j = 125c,v ge = 10v t j = 125c,v ge = 15v t j = 25c,v ge = 10v t j = 25c, v ge = 10v or 15v t j = 25c,v ge = 15v 20 15 10 5 0 70 60 50 40 30 20 10 0 3000 2500 2000 1500 1000 500 0 3500 3000 2500 2000 1500 1000 500 0 t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v v ce = 800v r g = 5 ? l = 100 h i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 5 10 15 20 25 5 10 15 20 25 5 10 15 20 25 5 10 15 20 25 5 10 15 20 25 5 10 15 20 25 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 v ce = 800v v ge = +15v r g = 5 ? v ce = 800v v ge = +15v r g = 5 ? v ce = 800v t j = 25c, t j =125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 800v v ce = 800v v ge = +15v r g = 5 ? v ce = 800v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 800v
050-7415 rev - 8-2002 510 15202530 0.45 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.05 d=0.5 0.2 0.02 0.01 0.1 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area i c , collector current (a) figure 20, operating frequency vs collector current c res c ies c oes typical performance curves t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 10,000 5,000 1,000 500 100 10 0 10 20 30 40 50 0 200 400 600 800 1000 140 100 50 10 APT13GP120K max max1 max 2 max1 d(on)rd(off)f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? =
050-7415 rev - 8-2002 APT13GP120K figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 5 % 5 % t r t d(on) gate voltage collector voltage 10 % collector current 10% 90% t j = 125 c switching energy t d(off) 90% 90% t f 10% collector current collector voltage gate voltage t j = 125 c 0 switching energy *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt 13gp120bd1 v ce figure 21, inductive switching test circuit 18v v cc emitter 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia. 3.54 (.139) dimensions in millimeters and (inches) 16.51 (.650) 14.23 (.560) 6.35 (.250) max. gate collector 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) collector to-220ac package outline
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